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eol product elpida memory, inc. is a joint venture dram company of nec corporation and hitachi, ltd. hm5116405 series hm5117405 series 16 m edo dram (4-mword 4-bit) 4 k refresh/2 k refresh e0151h10 (ver. 1.0) (previous ade-203-633d (z)) jul. 6, 2001 ( k ) description the hm5116405 series, hm5117405 series are cmos dynamic rams organized 4,194,304-word 4-bit. they employ the most advanced cmos technology for high performance and low power. the hm5116405 series, hm5117405 series offer extended data out (edo) page mode as a high speed access mode. they have package variations of standard 26-pin plastic soj and standard 26-pin plastic tsop ii. features single 5 v (10%) access time: 50 ns/60 ns/70 ns (max) power dissipation ? active mode : 495 mw/440 mw/385 mw (max) (hm5116405 series) : 550 mw/495 mw/440 mw (max) (hm5117405 series) ? standby mode : 11 mw (max) : 0.83 mw (max) (l-version) edo page mode capability long refresh period ? 4096 refresh cycles : 64 ms (hm5116405 series) : 128 ms (l-version) ? 2048 refresh cycles : 32 ms (hm5117405 series) : 128 ms (l-version) 3 variations of refresh ? ras -only refresh ? cas -before- ras refresh ? hidden refresh
eol product hm5116405 series, hm5117405 series data sheet e0151h10 2 battery backup operation (l-version) test function ? 16-bit parallel test mode ordering information type no. access time package hm5116405s-5 hm5116405s-6 hm5116405s-7 50 ns 60 ns 70 ns 300-mil 26-pin plastic soj (cp-26/24db) HM5116405LS-5 hm5116405ls-6 hm5116405ls-7 50 ns 60 ns 70 ns hm5117405s-5 hm5117405s-6 hm5117405s-7 50 ns 60 ns 70 ns hm5117405ls-5 hm5117405ls-6 hm5117405ls-7 50 ns 60 ns 70 ns hm5116405ts-5 hm5116405ts-6 hm5116405ts-7 50 ns 60 ns 70 ns 300-mil 26-pin plastic tsop ii (ttp-26/24da) hm5116405lts-5 hm5116405lts-6 hm5116405lts-7 50 ns 60 ns 70 ns hm5117405ts-5 hm5117405ts-6 hm5117405ts-7 50 ns 60 ns 70 ns hm5117405lts-5 hm5117405lts-6 hm5117405lts-7 50 ns 60 ns 70 ns
eol product hm5116405 series, hm5117405 series data sheet e0151h10 3 pin arrangement 26 25 24 23 22 21 19 18 17 16 15 14 1 2 3 4 5 6 8 9 10 11 12 13 v cc i/o1 i/o2 we ras a11 a10 a0 a1 a2 a3 v cc v cc i/o1 i/o2 we ras a11 a10 a0 a1 a2 a3 v cc v i/o4 i/o3 cas oe a9 a8 a7 a6 a5 a4 v ss ss v i/o4 i/o3 cas oe a9 a8 a7 a6 a5 a4 v ss ss 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 hm5116405s/ls series hm5116405ts/lts series (top view) (top view) pin description pin name function a0 to a11 address input row/refresh address column address a0 to a11 a0 to a9 i/o1 to i/o4 data input/data output ras row address strobe cas column address strobe we write enable oe output enable v cc power supply v ss ground
eol product hm5116405 series, hm5117405 series data sheet e0151h10 4 pin arrangement 26 25 24 23 22 21 19 18 17 16 15 14 1 2 3 4 5 6 8 9 10 11 12 13 v cc i/o1 i/o2 we ras nc a10 a0 a1 a2 a3 v cc v i/o4 i/o3 cas oe a9 a8 a7 a6 a5 a4 v ss ss v cc i/o1 i/o2 we ras nc a10 a0 a1 a2 a3 v cc v i/o4 i/o3 cas oe a9 a8 a7 a6 a5 a4 v ss ss 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 hm5117405s/ls series hm5117405ts/lts series (top view) (top view) pin description pin name function a0 to a10 address input row/refresh address column address a0 to a10 a0 to a10 i/o1 to i/o4 data input/data output ras row address strobe cas column address strobe we write enable oe output enable v cc power supply v ss ground nc no connection
eol product hm5116405 series, hm5117405 series data sheet e0151h10 5 block diagram (hm5116405 series) timing and control column address buffers row address buffers i/o buffers a0 a1 to a9 a11 i/o1 to i/o4 a10 ras cas we oe column decoder row decoder 4m array 4m array 4m array 4m array
eol product hm5116405 series, hm5117405 series data sheet e0151h10 6 block diagram (hm5117405 series) timing and control column address buffers row address buffers i/o buffers a0 a1 to a10 i/o1 to i/o4 ras cas we oe column decoder row decoder 4m array 4m array 4m array 4m array
eol product hm5116405 series, hm5117405 series data sheet e0151h10 7 absolute maximum ratings parameter symbol value unit voltage on any pin relative to v ss v t C1.0 to +7.0 v supply voltage relative to v ss v cc C1.0 to +7.0 v short circuit output current iout 50 ma power dissipation p t 1.0 w operating temperature topr 0 to +70 c storage temperature tstg C55 to +125 c recommended dc operating conditions (ta = 0 to +70?c) parameter symbol min typ max unit note supply voltage v cc 4.5 5.0 5.5 v 1 input high voltage v ih 2.4 6.5 v 1 input low voltage v il C1.0 0.8 v 1 note: 1. all voltage referred to v ss .
eol product hm5116405 series, hm5117405 series data sheet e0151h10 8 dc characteristics (ta = 0 to +70?c, v cc = 5 v 10%, v ss = 0 v) (hm5116405 series) hm5116405 -5 -6 -7 parameter symbol min max min max min max unit test conditions operating current* 1 , * 2 i cc1 90 8070ma t rc = min standby current i cc2 2 2 2 ma ttl interface ras , cas = v ih dout = high-z 1 1 1 ma cmos interface ras , cas 3 v cc C 0.2 v dout = high-z standby current (l-version) i cc2 150 150 150 a cmos interface ras , cas 3 v cc C 0.2 v dout = high-z ras -only refresh current* 2 i cc3 90 8070ma t rc = min standby current* 1 i cc5 5 5 5 ma ras = v ih cas = v il dout = enable cas -before- ras refresh current i cc6 90 8070ma t rc = min edo page mode current* 1, * 3 i cc7 80 7065ma t hpc = min battery backup current i cc10 350 350 350 a cmos interface dout = high-z, cbr refresh: t rc = 31.3 s t ras 0.3 s input leakage current i li C10 10 C10 10 C10 10 a 0 v vin 7 v output leakage current i lo C10 10 C10 10 C10 10 a 0 v vin 7 v dout = disable output high voltage v oh 2.4 v cc 2.4 v cc 2.4 v cc v high iout = C2 ma output low voltage v ol 0 0.4 0 0.4 0 0.4 v low iout = 2 ma notes : 1. i cc depends on output load condition when the device is selected. i cc max is specified at the output open condition. 2. address can be changed once or less while ras = v il . 3. address can be changed once or less while cas = v ih .
eol product hm5116405 series, hm5117405 series data sheet e0151h10 9 dc characteristics (ta = 0 to +70?c, v cc = 5 v 10%, v ss = 0 v) (hm5117405 series) hm5117405 -5 -6 -7 parameter symbol min max min max min max unit test conditions operating current* 1 , * 2 i cc1 100 90 80 ma t rc = min standby current i cc2 2 2 2 ma ttl interface ras , cas = v ih dout = high-z 1 1 1 ma cmos interface ras , cas 3 v cc C 0.2 v dout = high-z standby current (l-version) i cc2 150 150 150 a cmos interface ras , cas 3 v cc C 0.2 v dout = high-z ras -only refresh current* 2 i cc3 100 90 80 ma t rc = min standby current* 1 i cc5 5 5 5 ma ras = v ih cas = v il dout = enable cas -before- ras refresh current i cc6 100 90 80 ma t rc = min edo page mode current* 1, * 3 i cc7 90 8075ma t hpc = min battery backup current i cc10 350 350 350 a cmos interface dout = high-z, cbr refresh: t rc = 62.5 s t ras 0.3 s input leakage current i li C10 10 C10 10 C10 10 a 0 v vin 7 v output leakage current i lo C10 10 C10 10 C10 10 a 0 v vin 7 v dout = disable output high voltage v oh 2.4 v cc 2.4 v cc 2.4 v cc v high iout = C2 ma output low voltage v ol 0 0.4 0 0.4 0 0.4 v low iout = 2 ma notes : 1. i cc depends on output load condition when the device is selected. i cc max is specified at the output open condition. 2. address can be changed once or less while ras = v il . 3. address can be changed once or less while cas = v ih .
eol product hm5116405 series, hm5117405 series data sheet e0151h10 10 capacitance (ta = 25?c, v cc = 5 v 10%) parameter symbol typ max unit notes input capacitance (address) c i1 5 pf 1 input capacitance (clocks) c i2 7 pf 1 output capacitance (data-in, data-out) c i/o 7 pf 1, 2 notes : 1. capacitance measured with boonton meter or effective capacitance measuring method. 2. cas = v ih to disable dout.
eol product hm5116405 series, hm5117405 series data sheet e0151h10 11 ac characteristics (ta = 0 to +70?c, v cc = 5 v 10%, v ss = 0 v) * 1 , * 2 , * 18 test conditions input rise and fall time: 2 ns input levels: v il = 0 v, v ih = 3 v input timing reference levels: 0.8 v, 2.4 v output timing reference levels: 0.8 v, 2.0 v output load: 1 ttl gate + c l (100 pf) (including scope and jig) read, write, read-modify-write and refresh cycles (common parameters) hm5116405/hm5117405 -5 -6 -7 parameter symbol min max min max min max unit notes random read or write cycle time t rc 84 104 124 ns ras precharge time t rp 30 40 50 ns cas precharge time t cp 71013ns ras pulse width t ras 50 10000 60 10000 70 10000 ns cas pulse width t cas 7 10000 10 10000 13 10000 ns row address setup time t asr 000ns row address hold time t rah 71010ns column address setup time t asc 000ns column address hold time t cah 71013ns ras to cas delay time t rcd 11 37 14 45 14 52 ns 3 ras to column address delay time t rad 9 2512301235ns 4 ras hold time t rsh 10 13 13 ns cas hold time t csh 35 40 45 ns cas to ras precharge time t crp 555ns oe to din delay time t oed 13 15 18 ns 5 oe delay time from din t dzo 000ns6 cas delay time from din t dzc 000ns6 transition time (rise and fall) t t 250250250ns7
eol product hm5116405 series, hm5117405 series data sheet e0151h10 12 read cycle hm5116405/hm5117405 -5 -6 -7 parameter symbol min max min max min max unit notes access time from ras t rac 50 60 70 ns 8, 9, 20 access time from cas t cac 13 15 18 ns 9, 10, 17, 20 access time from address t aa 25 30 35 ns 9, 11, 17, 20 access time from oe t oea 13 15 18 ns 9, 20 read command setup time t rcs 000ns read command hold time to cas t rch 000ns12 read command hold time from ras t rchr 50 60 70 ns read command hold time to ras t rrh 000ns12 column address to ras lead time t ral 25 30 35 ns column address to cas lead time t cal 15 18 23 ns cas to output in low-z t clz 000ns output data hold time t oh 333ns22 output data hold time from oe t oho 333ns output buffer turn-off time t off 13 15 15 ns 13, 22 output buffer turn-off to oe t oez 131515ns 13 cas to din delay time t cdd 13 15 18 ns 5 output data hold time from ras t ohr 333ns22 output buffer turn-off to ras t ofr 131515ns 22 output buffer turn-off to we t wez 131515ns we to din delay time t wed 13 15 18 ns ras to din delay time t rdd 13 15 18 ns ras next cas delay time t rncd 50 60 70 ns
eol product hm5116405 series, hm5117405 series data sheet e0151h10 13 write cycle hm5116405/hm5117405 -5 -6 -7 parameter symbol min max min max min max unit notes write command setup time t wcs 000ns14 write command hold time t wch 7 10 13 ns write command pulse width t wp 7 10 10 ns write command to ras lead time t rwl 7 10 13 ns write command to cas lead time t cwl 7 10 13 ns data-in setup time t ds 000ns15 data-in hold time t dh 7 10 13 ns 15 read-modify-write cycle hm5116405/hm5117405 -5 -6 -7 parameter symbol min max min max min max unit notes read-modify-write cycle time t rwc 111 135 161 ns ras to we delay time t rwd 67 79 92 ns 14 cas to we delay time t cwd 30 34 40 ns 14 column address to we delay time t awd 42 49 57 ns 14 oe hold time from we t oeh 13 15 18 ns refresh cycle hm5116405/hm5117405 -5 -6 -7 parameter symbol min max min max min max unit notes cas setup time (cbr refresh cycle) t csr 555ns cas hold time (cbr refresh cycle) t chr 7 10 10 ns we setup time (cbr refresh cycle) t wrp 000ns we hold time (cbr refresh cycle) t wrh 7 10 10 ns ras precharge to cas hold time t rpc 555ns
eol product hm5116405 series, hm5117405 series data sheet e0151h10 14 edo page mode cycle hm51w16405/hm51w17405 -5 -6 -7 parameter symbol min max min max min max unit notes edo page mode cycle time t hpc 20 25 30 ns 21 edo page mode ras pulse width t rasp 100000 100000 100000 ns 16 access time from cas precharge t cpa 28 35 40 ns 9, 17, 20 ras hold time from cas precharge t cprh 28 35 40 ns output data hold time from cas low t doh 3 3 3 ns 9, 17 cas hold time referred oe t col 7 10 13 ns cas to oe setup time t cop 5 5 5 ns read command hold time from cas precharge t rchc 28 35 40 ns edo page mode read-modify-write cycle hm5116405/hm5117405 -5 -6 -7 parameter symbol min max min max min max unit notes edo page mode read- modify-write cycle time t hprwc 57 68 79 ns we delay time from cas precharge t cpw 45 54 62 ns 14 test mode cycle * 19 hm5116405/hm5117405 -5 -6 -7 parameter symbol min max min max min max unit notes test mode we setup time t wts 000ns test mode we hold time t wth 7 10 10 ns refresh (hm5116405 series) parameter symbol max unit notes refresh period t ref 64 ms 4096 cycles refresh period (l-version) t ref 128 ms 4096 cycles
eol product hm5116405 series, hm5117405 series data sheet e0151h10 15 refresh (hm5117405 series) parameter symbol max unit notes refresh period t ref 32 ms 2048 cycles refresh period (l-version) t ref 128 ms 2048 cycles notes: 1. ac measurements assume t t = 2 ns. 2. an initial pause of 200 s is required after power up followed by a minimum of eight initialization cycles (any combination of cycles containing ras -only refresh or cas -before- ras refresh). if the internal refresh counter is used, a minimum of eight cas -before- ras refresh cycles are required. 3. operation with the t rcd (max) limit insures that t rac (max) can be met, t rcd (max) is specified as a reference point only; if t rcd is greater than the specified t rcd (max) limit, then access time is controlled exclusively by t cac . 4. operation with the t rad (max) limit insures that t rac (max) can be met, t rad (max) is specified as a reference point only; if t rad is greater than the specified t rad (max) limit, then access time is controlled exclusively by t aa . 5. either t oed or t cdd must be satisfied. 6. either t dzo or t dzc must be satisfied. 7. v ih (min) and v il (max) are reference levels for measuring timing of input signals. also, transition times are measured between v ih (min) and v il (max). 8. assumes that t rcd t rcd (max) and t rad t rad (max). if t rcd or t rad is greater than the maximum recommended value shown in this table, t rac exceeds the value shown. 9. measured with a load circuit equivalent to 1 ttl loads and 100 pf. 10. assumes that t rcd 3 t rcd (max) and t rcd + t cac (max) 3 t rad + t aa (max). 11. assumes that t rad 3 t rad (max) and t rcd + t cac (max) t rad + t aa (max). 12. either t rch or t rrh must be satisfied for a read cycles. 13. t off (max) and t oez (max) define the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels. 14. t wcs , t rwd , t cwd , t awd and t cpw are not restrictive operating parameters. they are included in the data sheet as electrical characteristics only; if t wcs 3 t wcs (min), the cycle is an early write cycle and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if t rwd 3 t rwd (min), t cwd 3 t cwd (min), and t awd 3 t awd (min), or t cwd 3 t cwd (min), t awd 3 t awd (min) and t cpw 3 t cpw (min), the cycle is a read-modify-write and the data output will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, the condition of the data out (at access time) is indeterminate. 15. these parameters are referred to cas leading edge in early write cycles and to we leading edge in delayed write or read-modify-write cycles. 16. t rasp defines ras pulse width in edo page mode cycles. 17. access time is determined by the longest among t aa , t cac and t cpa . 18. in delayed write or read-modify-write cycles, oe must disable output buffer prior to applying data to device. 19. the 16m dram offers a 16-bit time saving parallel test mode. address ca0 and ca1 for the 4m 4 are dont care during test mode. test mode is set by performing a we -and- cas -before- ras (wcbr) cycle. in 16-bit parallel test mode, data is written into 4 bits in parallel at each i/o (i/o1 to i/o4) and read out from each i/o. if 4 bits of each i/o are equal (all 1s or 0s), data output pin is a high state during test mode read cycle, then the device has passed. if they are not equal, data output pin is a low state, then the device has failed.
eol product hm5116405 series, hm5117405 series data sheet e0151h10 16 refresh during test mode operation can be performed by normal read cycles or by wcbr refresh cycles. to get out of test mode and enter a normal operation mode, perform either a regular cas - before- ras refresh cycle or ras -only refresh cycle. 20. in a test mode read cycle, the value of t rac , t aa , t cac and t cpa is delayed by 2 ns to 5 ns for the specified value. these parameters should be specified in test mode cycles by adding the above value to the specified value in this data sheet. 21. t hpc (min) can be achieved during a series of edo page mode write cycles or edo page mode read cycles. if both write and read operation are mixed in a edo page mode ras cycle (edo page mode mix cycle (1), (2)), minimum value of cas cycle (t cas + t cp + 2 t t ) becomes greater than the specified t hpc (min) value. the value of cas cycle time of mixed edo page mode is shown in edo page mode mix cycle (1) and (2). data output turns off and becomes high impedance from later risting edge of ras and cas . hold time and turn off time are specified by the timing specifications of later rising edge of ras and cas between t ohr and t oh , and between t ofr and t off . 22. data output turns off and becomes high impedance from later rising edge of ras and cas . hold time and turn off time are specified by the timing specifications of later rising edge of ras and cas between t ohr and t oh and between t ofr and t off . 23. xxx: h or l (h: v ih (min) v in v ih (max), l: v il (min) v in v il (max)) ///////: invalid dout when the address, clock and input pins are not described on timing waveforms, their pins must be applied v ih or v il .
eol product hm5116405 series, hm5117405 series data sheet e0151h10 17 timing waveforms* 23 read cycle
ras address we dout oe din t rc t ras t rp t csh t crp t rcd t rsh t cas t t t rad t ral t cal t asc t cah t asr row column t rah t rcs t rch t rrh t cdd t dzc high-z dout t dzo t oed t rac t oea t aa t cac t clz t oh t off t oho t oez cas t rdd t wed t ofr t ohr t wez t rchr
eol product hm5116405 series, hm5117405 series data sheet e0151h10 18 early write cycle ras address we din dout t rc * t ras t rp t crp t csh t rcd t rsh t cas t t t asr t rah t asc t cah column row t wcs t wch t ds t dh din t wcs wcs (min) high-z* t cas
eol product hm5116405 series, hm5117405 series data sheet e0151h10 19 delayed write cycle* 18 address cas ras we din oe dout t rc t ras t rp t csh t rcd t rsh t cas t crp t t column row t asr t rah t asc t cah t rcs t cwl t rwl t wp t dzc t ds t dh t dzo t oed t oeh t clz t oez high-z din high-z invalid dout
eol product hm5116405 series, hm5117405 series data sheet e0151h10 20 read-modify-write cycle* 18 ! " address ras din dout oe we t rwc t ras t rp t crp t cas t rcd t t t rad t asr t rah t asc t cah column row t rcs t cwd t cwl t awd t rwd t rwl t wp t dzc t dh t ds din high-z t dzo t oed t oeh t oea t cac t aa t rac t oho t oez t clz dout high-z cas
eol product hm5116405 series, hm5117405 series data sheet e0151h10 21 ras -only refresh cycle ! ras cas address dout high-z row t rc t rp t ras t t t crp t rpc t crp t asr t rah t off t ofr
eol product hm5116405 series, hm5117405 series data sheet e0151h10 22 cas -before- ras refresh cycle ras cas we dout address t rc t rp t ras t rpc t csr t chr t rpc t crp t cp t wrh t wrp t cp t t t off t ofr high-z t rp
eol product hm5116405 series, hm5117405 series data sheet e0151h10 23 hidden refresh cycle " ) 0 din oe dout we address ras t rc t rc t rc t rp t ras t rp t ras t rp t ras t t t rcd t rsh t chr t crp t rad t ral t cah t asc t rah t asr t t cdd t dzc dzo t oed t oez t oho t off t oh t cac t aa t rac t clz t dout column row oea t high-z t rch t rrh cas t wed t rdd wez t ofr t ohr t rcs t wrh t rrh t wrp t wrh t wrp
eol product hm5116405 series, hm5117405 series data sheet e0151h10 24 edo page mode read cycle din oe dout we address ras cas t cp t cp t cp t t t rch t rrh t dzc t cdd t rdd high-z t ofr t oez t oho t off t oh t ohr t t col t t cpa t aa t cac t cac t oea t aa t rac t aa t cac t cpa t t oez t oea t oez t aa t cac t t rasp cop t rp t cas t cas t cas t cal t csh t hpc t hpc crp t t asr t rah column 1 column 2 column 3 column 4 t t cah t asc t cah t cah t asc t cah t asc t wed t ral row dout 2 dout 2 dout 4 dout 1 t cas t rcs t t rcs dout 3 t oho t t cprh t hpc t oea t wez dzo t oed t rncd oho doh rch t rchr t cal t cal t cal t rsh t rchc cpa asc
eol product hm5116405 series, hm5117405 series data sheet e0151h10 25 edo page mode early write cycle * t wcs wcs (min) ras address we din dout t rasp t rp t t t csh t hpc t rsh t crp t cas t cp t cas t cp t cas t rcd t asr t rah t asc t cah t asc t cah t asc t cah t wch t wcs t wch t wcs t wch t wcs t dh t ds t dh t ds t dh t ds din 1 din 2 din n high-z* t row column 1 column 2 column n cas
eol product hm5116405 series, hm5117405 series data sheet e0151h10 26 edo page mode delayed write cycle* 18 / 0 "# ) we din oe dout address ras t rasp t rp t crp t rsh t cas t hpc t cas t cas t csh t rcd t t t cp t cp t asc t cah t asc t cah t asc t cah t rad t asr t rah t rcs t rcs t rcs t rwl t cwl t cwl t cwl t wp t wp t wp t dzc t ds t dzc t ds t ds t dzc t dh t dh t dh t dzo t oed t dzo t oed t dzo t oed t oeh t oeh t oeh t oez t clz t clz t oez t clz t oez invalid dout invalid dout invalid dout din 1 din 2 din n column n column 2 column 1 row high-z cas
eol product hm5116405 series, hm5117405 series data sheet e0151h10 27 edo page mode read-modify-write cycle* 18 # )* we din oe dout address ras t rasp t crp t cp t hprwc t t t rcd t cas t cp t cas t cas t rad t asr t asc t asc t asc t rah t cah t cah t cah t cwl t cpw t cwl t cpw t cwl t rwd t awd t awd t awd t cwd t rcs t cwd t rcs t cwd t rcs t wp t wp t wp t ds t dzc t ds t dzc t ds t dzc t dh t dh t dh t dzo t dzo t dzo t oeh t oeh t oeh t aa t rac t oez t clz dout n dout 2 dout 1 din 1 din 2 din n column n column 2 column 1 t rp row t rwl t oho t oea t cac t oez t clz t oho t oea t cac t cpa t oez t clz t oho t oea t cac t cpa high-z t oed t oed t oed aa t aa t t rsh cas
eol product hm5116405 series, hm5117405 series data sheet e0151h10 28 edo page mode mix cycle (1) din oe dout we address ras cas t cp t cp t cp t t t rch t rrh t cdd t rdd high-z t ofr t oez t oho t off t oh t cpa t aa t cac t aa t cac t cpa t oez t aa t oea t t rasp t rp t cas t cas t cas crp t t asr t rah column 1 column 2 column 3 column 4 t asc t cah t asc t cah t cah t cah t ral t cal row dout 2 dout 4 cpa t cas t wcs dout 3 t t t wp t wch t wed t wez t ds t dh t ds t dh din 3 din 1 t oea t oed t cac t asc t cpw t awd oho t cal t cal t cal t rcs t rcs t csh t rcd t rsh doh asc t
eol product hm5116405 series, hm5117405 series data sheet e0151h10 29 edo page mode mix cycle (2) din oe dout we address ras cas t cp t rncd t cp t t t rch t rrh t cdd t rdd high-z t ofr t oez t oho t off t oh t cpa t aa t cac t aa t cac t oez t t oea t t rasp t rp t cas t cas t cas t csh crp t t asr t rah column 1 column 2 column 3 column 4 t asc t cah t asc t cah t cah t asc t cah t ral t rcs row dout 1 dout 4 cpa t cas dout 3 t oho t wed t wez t ds t dh t ds t din 3 din 2 t oea t t cac t cpw t rch t rcs t wch t rac t oed t col t oea t oho t oez t dh oed t rcs t cal t cal t cal t cal t rcd t rchr t wcs t rsh t wp t asc aa cop
eol product hm5116405 series, hm5117405 series data sheet e0151h10 30 test mode cycle * 19 cbr or ras-only refresh ras cas we set cycle** test mode cycle *,** reset cycle normal mode ** * address, din, oe: h or l
eol product hm5116405 series, hm5117405 series data sheet e0151h10 31 test mode set cycle @ @ b cc ? ? ? ?? a ?? @ @ b cc ? ? ? ?? a ?? @ @ b cc ? ? ? ?? a ?? @ @ b cc ? ? ? ?? a ?? @ @ b cc ? ? ? ?? a ?? cas we address dout ras t rc t rp t ras t rp t chr t csr t rpc t rpc t crp t t t cp t wts t wth t cp t off high-z t ofr
eol product hm5116405 series, hm5117405 series data sheet e0151h10 32 package dimensions hm5116405s/ls series hm5117405s/ls series (cp-26/24db) 16.90 17.27 max 0.74 7.62 0.13 8.51 0.13 26 14 113 0.10 0.43 0.10 3.50 0.26 19 21 8 6 2.65 0.12 1.30 max 0.80 +0.25 ?.17 2.54 1.27 hitachi code jedec eiaj weight (reference value) cp-26/24db conforms conforms 0.8 g 0.41 0.08 unit: mm dimension including the plating thickness base material dimension 6.79 + 0.19 ?0.18
eol product hm5116405 series, hm5117405 series data sheet e0151h10 33 hm5116405ts/lts series hm5117405ts/lts series (ttp-26/24da) 17.14 17.54 max 26 14 113 1.27 0.21 0.42 0.08 1.20 max 0.10 7.62 9.22 0.20 0.145 0.05 0.13 0.05 0 ?5 0.50 0.10 m 1.15 max 0.68 19 21 68 0.80 hitachi code jedec eiaj weight (reference value) ttp-26/24da conforms 0.30 g 0.40 0.06 0.125 0.04 2.54 unit: mm dimension including the plating thickness base material dimension
eol product hm5116405 series, hm5117405 series data sheet e0151h10 34 cautions 1. elpida memory, inc. neither warrants nor grants licenses of any rights of elpida memory, inc.s or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. elpida memory, inc. bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. elpida memory, inc. makes every attempt to ensure that its products are of high quality and reliability. however, contact elpida memory, inc. before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by elpida memory, inc. particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. elpida memory, inc. bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating elpida memory, inc. product does not cause bodily injury, fire or other consequential damage due to operation of the elpida memory, inc. product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from elpida memory, inc.. 7. contact elpida memory, inc. for any questions regarding this document or elpida memory, inc. semiconductor products.

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